TB9408VA www.vishay.com vishay semiconductors rev. 1.1, 28-jul-14 1 document number: 84227 for technical questions, contact: optochipsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 specification of gaalas ir emitting diode chip description TB9408VA is an infrared, 940 nm emitting diode in gaalas multi quantum well technology with high radiant power and high speed. anode is the bond pad on top. features ? package type: chip ? package form: single chip ? technology: multi qu antum well (mqw) ? dimensions chip (l x w x h in mm): 0.2 x 0.2 x 0.19 ? peak wavelength: = 940 nm ? material categorization: for definitions of compliance please see www.vishay.com/doc?99912 general information the datasheet is based on vishay optoel ectronics sample testing under certain predetermined and assumed conditions, and is provided for illustration purpose only. customers are encouraged to perform testing in actual proposed packaged and used conditions. vishay optoelectronics die products are tested us ing vishay optoelectronics base d quality assurance procedures and are manufactured using vishay optoelectronics established pr ocesses. estimates such as th ose described and set forth in this datasheet for semicond uctor die will vary de pending on a number of packaging, hand ling, use, and other factors. therefore sold die may not perform on an equivale nt basis to standard package products. note ? test condition see table basic characteristics note ? moq: minimum order quantity product summary component e (mw) i e (mw/sr) ? (deg) p (nm) t r (ns) TB9408VA 3.5 4.0 80 940 15 ordering information ordering code packaging remarks package form TB9408VA-sf-f wafer sawn on foil moq: 100 000 pcs chip absolute maximum ratings (t amb = 25 c, unless otherwise specified) parameter test condition symbol value unit forward current i f 75 ma reverse voltage v r 5v surge forward current t p = 100 s i fsm 500 ma junction temperature t j 100 c operating temperature range t amb -40 to +85 c storage temperature range chip t stg1 -40 to +100 c storage temperature range on foil t stg2 -40 to +50 c
TB9408VA www.vishay.com vishay semiconductors rev. 1.1, 28-jul-14 2 document number: 84227 for technical questions, contact: optochipsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 notes (1) the measurements are based on samples of die which are mounted on a to-18 gold header without resin coating (2) the radiant intensity, i e , is measured on the geometric axis of the to-18 header (3) the radiant power, e , is measured with chip on bare plate and aperture angle about 30, as indicated on the label of each wafer basic characteristics (t amb = 25 c, unless otherwise specified) fig. 1 - relative spectral emission e rel = f ( ) fig. 2 - radiant characteristics i rel = f( ? ) dimensions fig. 3 basic characteristics (t amb = 25 c, unless otherwise specified) parameter test condition symbol min. typ. max. unit forward voltage i f = 5 ma v f 1.1 1.18 1.25 v i f = 20 ma v f 1.13 1.26 1.4 v i f = 100 ma v f 1.45 v i f = 500 ma, t p = 100 s v f 2.0 v radiant power (1) i f = 100 ma e 22 mw radiant intensity (2) i f = 100 ma i e 4.0 mw/sr radiant power (epo xy encapsulated) i f = 100 ma e 40 mw radiant power chip (3) i f = 50 ma e 2.5 3.5 5.0 mw temperature coefficient of radiant power i f = 1 ma tk e -1.1 %/k reverse voltage i r = 10 a v r 718 v temperature coefficient of forward voltage i f = 1 ma tk vf -1.5 mv/k angle of half intensity i f = 100 ma ? > 80 deg peak wavelength i f = 30 ma p 920 945 960 nm spectral bandwidth i f = 30 ma 0.5 25 nm rise time / fall time i f = 100 ma t r , t f 15 ns 0 0.25 0.5 0.75 1.0 1.25 750 800 850 900 950 1000 1050 1100 21632 - wavelength (nm) ? e rel - relative radiant power relative angular intensity 90 80 70 60 50 40 30 20 10 0 - 80 - 70 - 60 - 50 - 40 - 30 - 20 - 10 0 21630 100 50 0 50 100 n (cathode) side electrode pattern: p (anode) side p substrate sectional view (schematic): anode typ. 185 m n
TB9408VA www.vishay.com vishay semiconductors rev. 1.1, 28-jul-14 3 document number: 84227 for technical questions, contact: optochipsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 note ? all chips are checked in accordance with the vishay semiconductor, specification of visual inspection fvov6870. the visual inspection shall be made in accordance with the specification of visual inspection as referenced. the visual inspe ction of chip backside is performed wi th stereo microscope with incident light and 40x to 80x magnification. the quality inspection (final visual inspection) is performed by production. an addition al visual inspection step as special re lease procedure by qm is not installed. handling and storage conditions ? the hermetically sealed shipment lots shall be opened in temperature and moistu re controlled cleanroom environment only. it is mandatory to follow the rules for disposition of ma terial that can be hazardous for humans and environment. ? product must be handled only at esd safe workstations. standard esd precaution s and safe work environments are as defined in mil-hdbk-263. ? singulated die are not to be handled with tweezers. a vacuum wand with non metallic esd pro tected tip shou ld be used. packing chips are fixed on adhesive foil. upon re quest the foils can be mounted on plastic frame or disco frame. for shipment, the wafers are arranged to stacks and hermeti cally sealed in plastic bags to ensure protection against environmental influence (humidity and contamination). use for recycling reliable operator s only. we can help getting in touch with your nearest sales office. by agreement we will ta ke back packing material, if it is sorted. you will have to bear the costs of transport. we will invoice you for any costs incurre d for packing material that is returned unsorted or which we are not obliged to accept. mechanical dimensions parameter symbol min. typ. max. unit length of chip edge (x-direction) l x 0.185 0.200 0.215 mm length of chip ed ge (y-direction) l y 0.185 0.200 0.215 mm emission area a e 0.18 x 0.18 mm 2 die height h 0.175 0.190 0.205 mm diameter of bondpad d 0.110 mm additional information frontside metallization, anode gold backside metallization, cathode gold alloy dicing sawing die bonding technology epoxy bonding
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